SK hynix Begins Mass-Production of the World’s First 12-Layer HBM3E Memory
SK hynix Inc. announced today that it has begun mass production of the world’s first 12-layer HBM3E product with 36GB, the largest capacity of existing...
Tag : HBM3E
SK hynix to Showcase Next-Generation Technology at FMS 2024
SK hynix Inc. announced today it will participate in FMS 2024, a global semiconductor memory event taking place in Santa Clara, California, from August 6th...
SK hynix CEO Says HBM from 2025 Production Almost Sold Out
SK hynix held a press conference unveiling its vision and strategy for the AI era today at its headquarters in Icheon, Gyeonggi Province, to share...
SK hynix Begins Volume Production of Industry’s First HBM3E
SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it has begun volume production of HBM3E, the newest AI memory product with ultra-high performance,...
Samsung Develops Industry-First 36GB HBM3E 12H DRAM
Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed HBM3E 12H, the industry’s first 12-stack HBM3E DRAM and the...
SK hynix to Showcase AI Memory Leadership at CES 2024
SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it will showcase the technology for ultra-high performance memory products, the core of future AI...
SK hynix Develops World’s Best Performing HBM3E DRAM
SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it successfully developed HBM3E, the next-generation of the highest-specification DRAM for AI applications currently available,...